2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N
|Published (Last):||11 June 2008|
|PDF File Size:||18.97 Mb|
|ePub File Size:||10.88 Mb|
|Price:||Free* [*Free Regsitration Required]|
KG, a subsidiary of Microchip Technology Inc. Code protection does not.
2N6661 Datasheet PDF
Application Notes Download All. For pricing and availability, contact Microchip Local Sales.
Microchip disclaims all liability. Buy from the Microchip Store. Only show products with samples. Silicon Storage Technology is a registered trademark of. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.
2N Datasheet(PDF) – Vishay Siliconix
Please contact sales office if device weight is not available. Incorporated in the U. Note the following details of the code protection feature on Microchip devices: It is your responsibility catasheet ensure that your application meets with your specifications.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated.
We at Microchip are committed to continuously improving datasgeet code protection features of our. GestIC is a registered trademarks of Microchip Technology. Microchip disclaims all liability arising from this information and its use. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
All of these methods, to our. Tempe, Arizona; Gresham, Oregon and design centers in California. Microchip Technology Incorporated in the U. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
2N6661 MOSFET. Datasheet pdf. Equivalent
All other trademarks mentioned herein are property of their respective companies. We at Microchip are committed to continuously improving the code protection features of our products. The Microchip name and logo, the Microchip logo, AnyRate. Code protection is constantly evolving.
HTTP This page has been moved
Sampling Options Buy Now. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High daatsheet impedance and high gain.
Information contained in this publication regarding device. KG, a subsidiary of Microchip. In Production View Datasheet Features: All other trademarks mentioned herein are property of their.
Most likely, the person doing so is engaged in theft of intellectual property. It is your responsibility to. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.